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Three Phase Rectifier Bridges Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSD 62/08 PSD 62/12 PSD 62/14 PSD 62/16 PSD 62/18 PSD 62 IdAVM VRRM = 63A = 800-1800 V ~ ~ ~ Symbol IdAVM IFSM Test Conditions TC = 110C, module TVJ = 45C t = 10 ms (50 Hz), sine VR = 0 t = 8.3 ms (60 Hz), sine TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 63 550 600 500 550 1520 1520 1250 1250 -40 ... + 150 150 -40 ... + 125 A A A A A A2 s A2 s A2 s A2 s C C C V V Nm Nm g i2 dt TVJ = 45C VR = 0 TVJ = TVJM VR = 0 Features * Package with screw terminals * Isolation voltage 3000 V * Planar glasspassivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered E 148688 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling capability Package, style and outline Dimensions in mm (1mm = 0.0394") TVJ TVJM Tstg VISOL Md Weight 50/60 HZ, RMS IISOL 1 mA t = 1 min t=1s (M5) (M5) 2500 3000 5 5 160 Mounting torque Terminal connection torque typ. Symbol IR VF VTO rT RthJC RthJK dS dA a Test Conditions VR = VRRM VR = VRRM TVJ = 25C TVJ = TVJM Characteristic Value 0.3 5 1.8 0.8 8 1.45 0.24 1.87 0.31 10.0 9.4 50 mA mA V V m K/W K/W K/W K/W mm mm m/s2 IF = 150 A TVJ = 25C For power-loss calculations only TVJ = TVJM per diode; DC current per module per diode; DC current per module Creeping distance on surface Creeping distance in air Max. allowable acceleration POWERSEM GmbH, Walperdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2003 POWERSEM reserves the right to change limits, test conditions and dimensions PSD 62 IF(OV) -----IFSM 200 [A] IFSM (A) TVJ=45C TVJ=150C 550 500 4 10 2 As 1.6 150 1.4 1.2 100 1 0 VRRM 10 3 TVJ=45C TVJ=150C 50 IF 0 Tvj = 150C Tvj = 25C 0.5 1 1.5 VF [V] 2 0.8 1/2 VRRM 0.6 0.4 10 0 10 1 VRRM 10 1 t[ms] 10 2 10 3 2 1 2 4 t [ms] 6 10 Fig. 1 Forward current versus voltage drop per diode 200 [W] 175 150 125 100 75 50 25 PVTOT 0 20 IFAVM DC sin.180 rec.120 rec.60 rec.30 40 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 100 Fig. 3 i2dt versus time (1-10ms) per diode (or thyristor) PSD 62 TC 0.38 0.26 0.51 = RTHCA [K/W] 105 110 115 80 [A] 60 DC sin.180 rec.120 rec.60 rec.30 0.76 120 125 40 1.26 130 135 20 IdAV 0 50 100 TC(C) 150 200 2.76 140 145 C 150 60 0 [A] Tamb 50 100 [K] 150 Fig. 4 Power dissipation versus direct output current and ambient temperature 2.5 K/W Fig.5 Maximum forward current at case temperature 2 1.5 1 0.5 Zth Z thJK Z thJC 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walperdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2003 POWERSEM reserves the right to change limits, test conditions and dimensions |
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